DocumentCode
1965651
Title
The Optimum Area for Millimetre-Wave Impatt Diodes
Author
Groves, I S ; Huish, P.W.
Author_Institution
Post Office Research Centre, Martlesham Heath, IPSWICH IP5 7RE England
fYear
1975
fDate
1-4 Sept. 1975
Firstpage
256
Lastpage
260
Abstract
By considering the loss of a practical millimetre-wave oscillator circuit, the variation of oscillator power with diode area for a constant junction temperature rise is examined, the results being scaled from measurements on a known device. It is concluded that the diode area for optimum oscillator power is a function of junction temperature rise and thus diodes for reliable oscillators will have different design criteria from devices giving the more spectacular results. Results are presented for silicon single and double-drift and gallium arsenide single drift IMPATT diodes over the 30-60 GHz range.
Keywords
Circuits; Diodes; Energy measurement; Frequency; Gold; Life estimation; Metallization; Oscillators; Power system reliability; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1975. 5th European
Conference_Location
Hamburg, Germany
Type
conf
DOI
10.1109/EUMA.1975.332204
Filename
4130819
Link To Document