Title :
Stabilized 12 GHz MIC Oscillators using GaAs FET´s
Author :
James, D.S. ; Painchaud, G.R. ; Minkus, E. ; Hoefer, W.J.R.
Author_Institution :
Communications Research Centre, Department of Communications, Ottawa, KIN 8T5, Canada.
Abstract :
This paper describes low power oscillators principally intended for use in MIC mixer applications. The circuits are fabricated with Plessey GAT 3 and NEC (Nippon) V244 FET´s suitably packaged for use with microstrip substrates. The oscillators have been stabilized using a TE012 cavity coupled to the microstrip through an aperture in the microstrip ground plane, or alternatively by means of a solid dielectric resonator on the surface of the substrate. Very good noise performance and temperature stability have been measured. The injection-locking behaviour of the oscillators has also been studied.
Keywords :
Apertures; Coupling circuits; Dielectric substrates; FETs; Gallium arsenide; Injection-locked oscillators; Microstrip resonators; Microwave integrated circuits; National electric code; Packaging;
Conference_Titel :
Microwave Conference, 1975. 5th European
Conference_Location :
Hamburg, Germany
DOI :
10.1109/EUMA.1975.332211
