• DocumentCode
    1965795
  • Title

    Stabilized 12 GHz MIC Oscillators using GaAs FET´s

  • Author

    James, D.S. ; Painchaud, G.R. ; Minkus, E. ; Hoefer, W.J.R.

  • Author_Institution
    Communications Research Centre, Department of Communications, Ottawa, KIN 8T5, Canada.
  • fYear
    1975
  • fDate
    1-4 Sept. 1975
  • Firstpage
    296
  • Lastpage
    300
  • Abstract
    This paper describes low power oscillators principally intended for use in MIC mixer applications. The circuits are fabricated with Plessey GAT 3 and NEC (Nippon) V244 FET´s suitably packaged for use with microstrip substrates. The oscillators have been stabilized using a TE012 cavity coupled to the microstrip through an aperture in the microstrip ground plane, or alternatively by means of a solid dielectric resonator on the surface of the substrate. Very good noise performance and temperature stability have been measured. The injection-locking behaviour of the oscillators has also been studied.
  • Keywords
    Apertures; Coupling circuits; Dielectric substrates; FETs; Gallium arsenide; Injection-locked oscillators; Microstrip resonators; Microwave integrated circuits; National electric code; Packaging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1975. 5th European
  • Conference_Location
    Hamburg, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1975.332211
  • Filename
    4130826
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1965795