Optimization of double diffused floating guarding ring InGaAs/InP avalanche photodiodes

Author

Wei, Jian ; Dries, J. Chris ; Wang, Hongsheng ; Olsen, Greg H. ; Forrest, Stephen R.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

Volume

2

fYear

2001

fDate

2001

Firstpage

697

Abstract

In this study, the double diffused FGR structure of a high-speed InGaAs/InP APD was optimized from both theoretical analysis and experimental results. A high-speed edge-breakdown-free APD with gain of more than 10 was demonstrated following the design rule. Noise of this APD was measured and analyzed incorporating the dead-space effect

Keywords

III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; optical receivers; semiconductor device breakdown; semiconductor device models; semiconductor device noise; 1D simulation; 2D simulation; InGaAs-InP; McIntyre theory; dead-space effect; double diffused floating guarding ring; edge-breakdown-free APD; gain profiles; high-speed APD; multiplication layer thickness; noise behavior; Avalanche photodiodes; Diodes; Electric breakdown; Indium gallium arsenide; Indium phosphide; Noise measurement; Optical fiber sensors; Optical materials; Optical sensors; Optoelectronic and photonic sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969005

Filename

969005