DocumentCode
1966099
Title
Growth of GaSb and GalnAsSb epilayers on GaAs substrates by MOCVD
Author
Guang-yu, Wei ; Rui-wu, Peng
Author_Institution
Shanghai Institute of Metallurgy, Chinese Academy of Sciences
fYear
1992
fDate
8-11 Jun 1992
Firstpage
47
Lastpage
49
Keywords
Crystalline materials; Epitaxial growth; Gallium arsenide; Hall effect; MOCVD; Optical films; Optical scattering; Raman scattering; Substrates; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.664929
Filename
664929
Link To Document