Band-gap circuit design challenges in high-performance 32-nm technology

32-nm complementary metal oxide semiconductor (CMOS) silicon-on-insulator (SOI) with metal gate high-k (MGHK) offers high performance and low power for microprocessors. However, these advanced technologies come with challenges for analog design. Many of the stressor performance elements can adversely impact analog circuit behavior. For example, band-gap circuits, used ubiquitously in voltage references, are one such challenging component. We investigated both design and process methods that resulted in robust band-gap voltage and temperature response characteristics without impacting performance elements for microprocessor frequency.