DocumentCode
1966285
Title
Prospects for a BiCFET III-V HBT Process
Author
Zampardi, Peter J. ; Sun, Mike ; Cismaru, Cristian ; Li, Jiang
Author_Institution
Skyworks Solutions, Inc., Newbury Park, CA, USA
fYear
2012
fDate
14-17 Oct. 2012
Firstpage
1
Lastpage
3
Abstract
While complementary FETs are routinely available in BiCMOS processes, the successful integration of HBTs with complementary FETs has not been reported. In this work, we demonstrate a material structure and process capable of allowing HBTs plus n and p-channel MESFETs. We report on the DC and AC characteristics of the HBT and the p-FET DC performance. The n-FET is unaffected by this material design.
Keywords
BiCMOS integrated circuits; III-V semiconductors; Schottky gate field effect transistors; heterojunction bipolar transistors; AC characteristics; BiCFET III-V HBT process; BiCMOS processes; DC characteristics; complementary field effect transistors; material design; material structure; n-FET; p-FET; p-channel MESFET; Gain; Gallium arsenide; Heterojunction bipolar transistors; Logic gates; MESFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
Conference_Location
La Jolla, CA
ISSN
1550-8781
Print_ISBN
978-1-4673-0928-8
Type
conf
DOI
10.1109/CSICS.2012.6340116
Filename
6340116
Link To Document