Advances in III-nitride micro-photonic devices

III-nitride optoelectronic devices offer benefits including UV/blue emission (allowing higher optical storage density and resolution as well as the ability for chemical- and biohazard substance detection), the ability to operate at very high temperatures and power levels due to their mechanical hardness and larger band gaps, high speed due to the intrinsically rapid radiative recombination rates, and large band offset of 2.8 eV or 4.3 eV allowing novel quantum well (QW) devices, and high emission efficiencies. These together may allow the creation of micro-size optoelectronic and photonic devices with unprecedented properties and functions. Our research group has successfully fabricated electrically-pumped individual micro-size LEDs and micro-LED arrays and observed enhanced quantum efficiencies. III-nitride microdisplays and submicron waveguides are also discussed