• DocumentCode
    1967176
  • Title

    Instrumentation and standards for testing static control materials

  • Author

    Chubb, John N.

  • Author_Institution
    John Chubb Instrum., Cheltenham, UK
  • fYear
    1989
  • fDate
    1-5 Oct. 1989
  • Firstpage
    1948
  • Abstract
    The design, operation, and performance capabilities of an instrument that assesses insulating and semi-insulating materials by measuring of static charge decay are described. A patch of charge is deposited on the surface, and a fast-response electrostatic fieldmeter is used for direct, noncontact observation of the rate of charge dissipation. Comments are made on a proposed IEC standard incorporating the above method for assessing insulating materials. It is proposed that materials used in proximity to sensitive semiconductors should be of the static dissipative type with decay time constants at surface potentials in the 50 to 100 V range between 10 and 500 ms. The shortest decay time avoids the risk of spark-type electrical discharges to the surface, and the longer time is adequately short compared to normal manual actions likely to be involved in triboelectric charging. Examples of decay curves are given.<>
  • Keywords
    electric breakdown; electrostatic discharge; instrumentation; insulation testing; standards; static electrification; 10 to 500 ms; 50 to 100 V; ESD; charge dissipation; decay time constants; electric breakdown; electrical discharges; electrostatic fieldmeter; instrumentation; insulating materials; insulation testing; semi-insulating materials; standards; static charge decay; static control materials; surface potentials; triboelectric charging; Charge measurement; Current measurement; Electrostatic measurements; IEC standards; Instruments; Insulation; Materials testing; Semiconductor materials; Surface charging; Surface discharges;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industry Applications Society Annual Meeting, 1989., Conference Record of the 1989 IEEE
  • Conference_Location
    San Diego, CA, USA
  • Type

    conf

  • DOI
    10.1109/IAS.1989.96906
  • Filename
    96906