DocumentCode
1967282
Title
Chirp characteristics of silicon Mach-Zehnder modulators
Author
Wei, Yuxin ; Zhao, Yong ; Li, Guoyi ; Yang, Jianyi ; Wang, Minghua ; Jiang, Xiaoqing
Author_Institution
Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou, China
fYear
2010
fDate
8-12 Dec. 2010
Firstpage
379
Lastpage
380
Abstract
Chirp characteristics of silicon based Mach-Zehnder-interferometer (MZI) modulators with forward biased P-I-N diode and reverse biased PN diode are analyzed, respectively. Simulation result shows that the chirp parameter is negative and influenced by the carrier absorption effect, the amplitude and frequency of applied sinusoidal modulating signals.
Keywords
Mach-Zehnder interferometers; chirp modulation; elemental semiconductors; p-i-n diodes; silicon; P-I-N diode; Si; carrier absorption effect; chirp characteristics; chirp parameter; reverse biased PN diode; silicon Mach-Zehnder modulators; silicon Mach-Zehnder-interferometer; sinusoidal modulating signals; Chirp; Frequency modulation; Optical modulation; P-i-n diodes; Phase shifters; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
Conference_Location
Shanghai
Print_ISBN
978-1-4244-7111-9
Type
conf
DOI
10.1109/ACP.2010.5682510
Filename
5682510
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