DocumentCode
1967347
Title
InP lateral overgrowth technology for silicon photonics
Author
Wang, Zhechao ; Junesand, Carl ; Metaferia, Wondwosen ; Hu, Chen ; Lourdudoss, Sebastian ; Wosinski, Lech
Author_Institution
Sch. of ICT, R. Inst. of Technol. (Sweden), Kista, Sweden
fYear
2010
fDate
8-12 Dec. 2010
Firstpage
377
Lastpage
378
Abstract
Epitaxial Lateral Overgrowth has been proposed as a key technology of a novel hybrid integration platform for active silicon photonic components. By optimizing the process, a dislocation free InP layer has been successfully grown on top of silicon wafer, which can be used as the base for active devices.
Keywords
III-V semiconductors; dislocations; elemental semiconductors; epitaxial growth; indium compounds; integrated optics; optical materials; semiconductor growth; silicon; InP-Si; Si; active silicon photonic components; epitaxial lateral overgrowth; hybrid integration platform; layer dislocation; silicon wafer; Bonding; Epitaxial growth; Indium phosphide; Optical devices; Photonics; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
Conference_Location
Shanghai
Print_ISBN
978-1-4244-7111-9
Type
conf
DOI
10.1109/ACP.2010.5682513
Filename
5682513
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