New buried heterostructure using MOVPE selective regrowth of semi-insulating (SI-) InAlAs for low capacitance optical sources

Author

Bouchoule, S. ; Decobert, J. ; Grosmaire, S. ; Leclerc, D. ; Kazmierski, C.

Author_Institution

Lab. for Photonics & Nanostuctures, CNRS, Bagneux, France

Volume

2

fYear

2001

fDate

2001

Firstpage

883

Abstract

A new buried heterostructure (BH) is proposed for high-speed optical sources, based on selective regrowth of semi-insulating (SI-) InAlAs around an active mesa stripe. The performances of a first BH laser structure realised using SI-InAlAs were compared to that of standard InP:p/InP:n BH lasers. A reduction of the structure under both forward and reverse bias is obtained, with no degradation of the optical properties of the source

Keywords

III-V semiconductors; MOCVD; aluminium compounds; indium compounds; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; BH laser; InAlAs; MOVPE selective regrowth; active mesa stripe; active optical devices; blocking layers; buried heterostructure; diffusion profile; forward bias; high resistivity; high-speed optical sources; low capacitance optical sources; reverse bias; semi-insulating layer; Capacitance measurement; Conductivity; Degradation; Diodes; Epitaxial growth; Epitaxial layers; High speed optical techniques; Indium compounds; Optical modulation; Robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969099

Filename

969099