Title :
A 500 Mb/s/pin quadruple data rate SDRAM interface using a skew cancellation technique
Author :
Jeongpyo Kim ; Sung-Ho Wan ; Joonsuk Lee ; Hyoung Sik Nam ; Young Gon Kim ; Jae Hoon Shim ; Hyung Ki Ahn ; Seok Kang ; Kyung Nam Park ; Bong Hwa Jeong ; Jin Hong Ahn ; Beomsup Kim
Author_Institution :
Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
Abstract :
The operating speed of microprocessors has become faster than 500 MHz, while memory access speed has not been improved accordingly in spite of quadrupled increase in the memory density every three years. This imbalance requires memory systems to use a wide data-bus and/or a high-speed I/O interface to increase access speed. Increasing access speed with a wide data-bus is studied, but is practically limited by memory pin counts. Alternatively, Rambus DRAM (RDRAM) achieves access speed up to 800 MB/s in a well-controlled printed circuit board (PCB) environment by adopting a high-speed I/O interface. Low cost systems use synchronous DRAM (SDRAM) interface because they cannot afford a high-cost PCB. This system limits memory access speed to the system clock speed, which is commonly less than 100 MHz. Double data rate (DDR) SDRAM, is twice as fast as SDRAM memory access by taking both rising and falling edges of the system clock, while keeping the SDRAM interface. To deal with clock skew, the DDR SDRAM provides an extra strobe signal for the receiving end.
Keywords :
CMOS memory circuits; DRAM chips; digital phase locked loops; timing circuits; 500 Mbit; CMOS chip; I/O buffers; PLL; clock skew; data delay lines; memory access speed; multiplexer; quadruple data rate SDRAM interface; skew cancellation technique; synchronous DRAM; timing diagram; wide data-bus; Circuits; Clocks; Delay; Microelectronics; Phase locked loops; Random access memory; Registers; Routing; SDRAM; Sampling methods;
Conference_Titel :
Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC. 2000 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-5853-8
DOI :
10.1109/ISSCC.2000.839835