DocumentCode :
1968373
Title :
Antifuse EPROM circuit for field programmable DRAM
Author :
Joo-Sun Choi ; Jae-Kyung Wee ; Ho-Youb Cho ; Phil-Jung Kim ; Jin-Keun Oh ; Chang-Hyuk Lee ; Jin-Yong Chung ; Sea-Chung Kim ; Woodward Yang
Author_Institution :
Memory R&D Centre, Hyundai Electron., Inchon, South Korea
fYear :
2000
fDate :
9-9 Feb. 2000
Firstpage :
406
Lastpage :
407
Abstract :
A 3 V EPROM circuit is implemented in an existing 0.22 /spl mu/m DRAM process with an antifuse based on destructive breakdown of the highly-reliable 6.5 nm oxide-nitride-oxide (ONO) storage capacitor dielectric. Using an internal high-voltage charge pump, this antifuse EPROM is programmed without external high-voltage power supplies which facilitates full pin compatibility with existing SDRAM specifications. This antifuse EPROM circuit enables field programmable DRAM functionality such as post-package memory repair, output impedance matching for system memory module calibration, user programmable memory bank architectures, data encryption, and product serial numbers. While laser programmable polysilicon fuses are used extensively to provide nonvolatile memory for repair of defective DRAM cells, they are limited to programming at wafer level and before packaging. Previous implementations of antifuse EPROM utilized external high-voltage supplies for wafer level programming only due to the incompatibility of high voltage power supplies with existing DRAM pin configurations.
Keywords :
CMOS memory circuits; DRAM chips; EPROM; impedance matching; memory architecture; 3 V; ONO storage capacitor dielectric; antifuse EPROM circuit; data encryption; destructive breakdown; field programmable DRAM; internal high-voltage charge pump; output impedance matching; post-package memory repair; product serial numbers; system memory module calibration; triple well structure; user programmable memory bank architectures; Calibration; Capacitors; Charge pumps; Circuits; Dielectric breakdown; EPROM; Impedance matching; Power supplies; Random access memory; SDRAM;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC. 2000 IEEE International
Conference_Location :
San Francisco, CA, USA
ISSN :
0193-6530
Print_ISBN :
0-7803-5853-8
Type :
conf
DOI :
10.1109/ISSCC.2000.839836
Filename :
839836
Link To Document :
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