• DocumentCode
    1968784
  • Title

    Implementing RF signal limiter with heterojunction devices

  • Author

    Seng, Hing Weng ; Sloan, Robin ; Williams, Keith

  • Author_Institution
    Dept. of Electron. & Electr. Eng., UMIST, Manchester, UK
  • fYear
    2004
  • fDate
    6-7 Sept. 2004
  • Firstpage
    195
  • Lastpage
    198
  • Abstract
    Microwave limiters are used to prevent burnout and permanent damage in power sensitive components such as receivers and mixers. State-of-the-art limiters are implemented employing PIN diodes, in which limiting is provided by varying the RF resistance of the diode. The PIN diode is a cheap and easy-to-use devices but its bandwidth and power rating is limited. Furthermore, PIN diodes cannot readily be fabricated. in MMIC technology. Here, an investigation is presented on the feasibility of employing heterojunction devices in limiters. This paper presents a T-switch attenuator formed by HEMTs simulated at X-band.
  • Keywords
    HEMT integrated circuits; attenuators; field effect MMIC; microwave limiters; 10 GHz; HEMT; MMIC technology; PIN diodes; RF signal limiter; T-switch attenuator; heterojunction devices; microwave limiters; mixers; power sensitive components; receivers; Circuits; Diodes; HEMTs; Heterojunctions; MMICs; MODFETs; Microwave devices; RF signals; Radio frequency; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Frequency Postgraduate Student Colloquium, 2004
  • Print_ISBN
    0-7803-8426-1
  • Type

    conf

  • DOI
    10.1109/HFPSC.2004.1360387
  • Filename
    1360387