DocumentCode
1968784
Title
Implementing RF signal limiter with heterojunction devices
Author
Seng, Hing Weng ; Sloan, Robin ; Williams, Keith
Author_Institution
Dept. of Electron. & Electr. Eng., UMIST, Manchester, UK
fYear
2004
fDate
6-7 Sept. 2004
Firstpage
195
Lastpage
198
Abstract
Microwave limiters are used to prevent burnout and permanent damage in power sensitive components such as receivers and mixers. State-of-the-art limiters are implemented employing PIN diodes, in which limiting is provided by varying the RF resistance of the diode. The PIN diode is a cheap and easy-to-use devices but its bandwidth and power rating is limited. Furthermore, PIN diodes cannot readily be fabricated. in MMIC technology. Here, an investigation is presented on the feasibility of employing heterojunction devices in limiters. This paper presents a T-switch attenuator formed by HEMTs simulated at X-band.
Keywords
HEMT integrated circuits; attenuators; field effect MMIC; microwave limiters; 10 GHz; HEMT; MMIC technology; PIN diodes; RF signal limiter; T-switch attenuator; heterojunction devices; microwave limiters; mixers; power sensitive components; receivers; Circuits; Diodes; HEMTs; Heterojunctions; MMICs; MODFETs; Microwave devices; RF signals; Radio frequency; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
High Frequency Postgraduate Student Colloquium, 2004
Print_ISBN
0-7803-8426-1
Type
conf
DOI
10.1109/HFPSC.2004.1360387
Filename
1360387
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