DocumentCode
1969191
Title
lnGaAs/GalnAsP/GalnP Strained-Layer Separate-Confinement Heterostructures Grown by OMVPE
Author
Groves, S.H.
Author_Institution
Lincoln Laboratory, Massachusetts Institute of Technology
fYear
1992
fDate
8-11 Jun 1992
Firstpage
75
Lastpage
75
Keywords
Gallium arsenide; Indium gallium arsenide; Laboratories; Laser excitation; Lattices; Optical device fabrication; Optical materials; Oxidation; Pump lasers; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.664944
Filename
664944
Link To Document