DocumentCode :
1969191
Title :
lnGaAs/GalnAsP/GalnP Strained-Layer Separate-Confinement Heterostructures Grown by OMVPE
Author :
Groves, S.H.
Author_Institution :
Lincoln Laboratory, Massachusetts Institute of Technology
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
75
Lastpage :
75
Keywords :
Gallium arsenide; Indium gallium arsenide; Laboratories; Laser excitation; Lattices; Optical device fabrication; Optical materials; Oxidation; Pump lasers; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664944
Filename :
664944
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1969191
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