DocumentCode
1969573
Title
The preferential nucleation sites of self-assembled quantum dots with the influence of interfacial dislocation network
Author
Zhou, Shuai ; Liu, Yu-Min ; Yu, Zhong-Yuan
Author_Institution
Key Lab. of Inf. Photonics & Opt. Communtications, Beijing Univ. of Posts & Telecommun., Beijing, China
fYear
2010
fDate
8-12 Dec. 2010
Firstpage
579
Lastpage
580
Abstract
By considering a theoretical computation model, the strain field and elastic stored energy due to an interfacial misfit dislocation network near the free surface have been calculated analytically. The result predicted the preferential nucleation sites of self-assembled quantum dots with the influence of interfacial dislocation network. Compared with Green function method, our solution is simple, direct and can solve the problem completely.
Keywords
Ge-Si alloys; dislocation nucleation; elasticity; elemental semiconductors; self-assembly; semiconductor quantum dots; silicon; SiGe-Si; elastic stored energy; free surface; interfacial misfit dislocation network; preferential nucleation sites; self-assembled quantum dots; strain field; Buffer layers; Computational modeling; Quantum dots; Self-assembly; Silicon germanium; Strain; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
Conference_Location
Shanghai
Print_ISBN
978-1-4244-7111-9
Type
conf
DOI
10.1109/ACP.2010.5682638
Filename
5682638
Link To Document