• DocumentCode
    1969747
  • Title

    A GaAs FET Designed for Maximum Flexibility in Electrical Performance

  • Author

    Bujatti, M. ; Massani, M.

  • Author_Institution
    SELENIA S.p.A. via Tiburtina km. 12,400 - 00131 Roma, Italy.
  • fYear
    1977
  • fDate
    5-8 Sept. 1977
  • Firstpage
    90
  • Lastpage
    94
  • Abstract
    A simple process has been developped which enables us to produce GaAs FET´s with enough flexibility in the geometry to adjust for a wide range of circuits requirements. In order to gain control on the active layer we used ion implantation on semi-insulating substrates. Results obtained an epitaxial and implanted layers are compared. Power output and S parameters are measured as a function of the gate width.
  • Keywords
    Etching; FETs; Flexible printed circuits; Frequency; Gain control; Gallium arsenide; Geometry; Ion implantation; Ohmic contacts; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1977. 7th European
  • Conference_Location
    Copenhagen, Denmark
  • Type

    conf

  • DOI
    10.1109/EUMA.1977.332408
  • Filename
    4131057
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1969747