DocumentCode
1969796
Title
An Experimental Evaluation of X-Band Mixers using Dual-Gate GaAs Mesfets
Author
Cripps, S.C. ; Nielsen, O. ; Parker, D. ; Turner, J.A.
Author_Institution
Allen Clark Research Centre, The Plessey Company Limited, Caswell, Towcester, Northants., U.K.
fYear
1977
fDate
5-8 Sept. 1977
Firstpage
101
Lastpage
104
Abstract
Experimental results are presented for X-band GaAs MESFET mixers using a dual-gate device. This device combines high conversion gain and low noise operation with the convenient feature that the RF and local oscillator signals can be applied to the separate gates. Biased near pinch off a one micron gate MESFET in a ´disc´ tuned circuit has yielded 11 dB of conversion gain and 6.5 dB noise figure (DSB) at 10 GHz with an IF of 30 MHz. Using an IF of 150 MHz a noise figure of 5.2 dB with 8 dB of conversion gain has been obtained.
Keywords
Circuits; FETs; Gain; Gallium arsenide; Local oscillators; MESFETs; Mixers; Noise figure; RF signals; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1977. 7th European
Conference_Location
Copenhagen, Denmark
Type
conf
DOI
10.1109/EUMA.1977.332410
Filename
4131059
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