DocumentCode
1970004
Title
Compensation devices versus power MOS and high speed IGBT - a device physics based guideline for the application
Author
Deboy, Gerald ; Purschel, Marco ; Schmitt, Markus ; Willmeroth, Armin
Author_Institution
Infineon Technologies AG, Germany
fYear
2001
fDate
11-13 September 2001
Firstpage
61
Lastpage
68
Keywords
Artificial intelligence; Diodes; Doping profiles; Guidelines; Insulated gate bipolar transistors; MOSFET circuits; Physics; Power MOSFET; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN
2-914601-01-8
Type
conf
DOI
10.1109/ESSDERC.2001.195205
Filename
1506587
Link To Document