Title :
100GHz SiGe:C HBTs using non selective base epitaxy
Author :
Martinet, B. ; Baudry, H. ; Kermarrec, O. ; Campidelli, Y. ; Laurens, M. ; Marty, M. ; Schwartzmann, T. ; Monroy, A. ; Bensahel, D. ; Chantre, A.
Author_Institution :
STMicroelectronics, Crolles, France
fDate :
11-13 September 2001
Keywords :
Doping; Epitaxial growth; Fabrication; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Silicon carbide; Silicon germanium; Wireless communication;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195210
