High Performance InGaAs PIN Photodetector

Author

Wang, Yung-Sheng ; Chang, Shoou-Jinn ; Chiou, Yu-Zung ; Lin, Wei

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

1

Lastpage

3

Abstract

In this paper, high quality InGaAs PIN photodetector prepared on S-doped InP substrate by metal organic chemical vapor deposition (MOCVD) are investigated. With a absorption layer of 2.8 mum and a photosensitive diameter window of 60 mum at reverse bias of 5V, dark current of 105 pA, capacitance of 0.475 pF, and the optical responsivities of 0.76 AAV and 1.17A/W, and the detectivities (D*) of 3.69><10¹²cmHz⁰⁵W^-1 and 5.6x10¹²cmHz⁰⁵W^-1, have been determined at 131 mum and 155 mum, respectively. Moreover, the 3-dB bandwidth of photodetector was estimated to be 6.7 GHz.

Keywords

III-V semiconductors; MOCVD; antireflection coatings; gallium arsenide; indium compounds; p-i-n photodiodes; photodetectors; PIN photodetector; absorption layer; capacitance; dark current; metal organic chemical vapor deposition; optical responsivity; photosensitive diameter window; reverse bias; substrate; Absorption; Bandwidth; Capacitance; Chemical vapor deposition; Dark current; Indium gallium arsenide; Indium phosphide; MOCVD; Organic chemicals; Photodetectors; InGaAs; noise; photodetector;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. APMC 2007. Asia-Pacific

Conference_Location

Bangkok

Print_ISBN

978-1-4244-0748-4

Electronic_ISBN

978-1-4244-0749-1

Type

conf

DOI

10.1109/APMC.2007.4554524

Filename

4554524