Title :
Multiple delta doping in aggressively scaled PHEMTs
Author :
Kalna, K. ; Asenov, A.
Author_Institution :
University of Glasgow, UK
fDate :
11-13 September 2001
Keywords :
Doping; Electron mobility; HEMTs; Indium; Linearity; MODFETs; Monte Carlo methods; PHEMTs; Semiconductor process modeling; Transconductance;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195265
