A High-Efficiency SiC MESFET Power Amplifier Based on Class-F Configuration

This paper reports a high efficiency power amplifier (PA), which is based on the class-F configuration using the composite right/left-handed transmission lines as the harmonic trap. Also, the compensation elements with the series capacitor and shunt inductor are used to compensate for the internal parasitic components of the packaged active device in the class-F PA design. To verify this method, a class-F PA is designed using a 10-W PEP SiC MESFET and tested for a continuous wave at WCDMA band of 2.14 GHz. From the measured results, the power-added efficiency (PAE) of 70.1% with a gain of 10.4 dB is achieved at an output power of 40.4 dBm.