Title :
Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs
Author :
Enciso, M. ; Fox, A. ; Aniel, F. ; Crozat, P. ; Giguerre, L. ; Adde, R. ; Zeuner, M. ; Höck, G.
Author_Institution :
Universite Paris Sud, Orsay, France
fDate :
11-13 September 2001
Keywords :
Germanium silicon alloys; HEMTs; MODFETs; Noise figure; Noise measurement; Performance evaluation; Probes; Scattering parameters; Silicon germanium; Substrates;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195296
