Enhancement of AsH₃ Decomposition on Highly Doped p-GaAs Surface Observed by Surface Photo-Aborption

Author

Kobayashi, Naoki ; Yamauchi, Yoshiharu

Author_Institution

NTT Basic Research Laboratories, Tokyo

fYear

1992

fDate

8-11 Jun 1992

Firstpage

109

Lastpage

110

Keywords

Ash; Charge transfer; Electrons; Epitaxial growth; Gallium arsenide; Reflectivity; Space charge; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference

Print_ISBN

0-87942-652-7

Type

DOI

10.1109/MOVPE.1992.664965

Filename

664965

Link To Document