DocumentCode :
1972156
Title :
Modeling of MOVPE GaAs Growth Assuming Thermodynamic Equilibrium at The Growth Front: (C2H5)2GaCl and AsH3
Author :
Hierlemann, M. ; Kuech, T.F.
Author_Institution :
University of Wisconsin, Department of Chemical Engineering
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
112
Lastpage :
113
Keywords :
Boundary conditions; Chemistry; Epitaxial growth; Epitaxial layers; Gallium arsenide; Impurities; Inductors; Semiconductor process modeling; Temperature dependence; Thermodynamics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664967
Filename :
664967
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1972156
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