Title :
RF reliability of gate last InGaAs nMOSFETs with high-k dielectric
Author :
Roll, Guntrade ; Egard, Mikael ; Johannson, Sofia ; Ohlsson, Lars ; Wernersson, Lars-Erik ; Lind, Erik
Author_Institution :
Electr. & Inf. Technol., Lund Univ., Lund, Sweden
Abstract :
A complete reliability study of the high-frequency characteristics for nMOSFETs on InGaAs channel with Al2O3/HfO2 gate dielectric is presented. DC gate voltage stress causes an increase in the transconductance frequency dispersion. Stress induced border traps degrade the maximum DC-transconductance, but do not react at high frequencies. The main degradation characteristics of the high-frequency measurements can be modeled by the threshold voltage related transconductance shift. The maximum of the cut-off frequency is shifted with stress to higher or lower gate biases, but not decreased.
Keywords :
III-V semiconductors; MOSFET; alumina; gallium arsenide; hafnium compounds; high-k dielectric thin films; indium compounds; semiconductor device breakdown; semiconductor device reliability; Al2O3-HfO2; DC gate voltage stress; DC transconductance; InGaAs; RF reliability; gate dielectric; high-frequency characteristics; high-frequency measurements; nMOSFETs; stress induced border traps; threshold voltage; transconductance frequency dispersion; transconductance shift; High K dielectric materials; Human computer interaction; Logic gates; MOSFET; Radio frequency; Stress; Transconductance; InGaAs; MOSFET; RF; high-k; reliability;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4799-0350-4
DOI :
10.1109/IIRW.2013.6804151
