Title :
L-Band GaAs FET Amplifier
Author :
Nevin, L. ; Wong, R.
Author_Institution :
HEWLETT-PACKARD COMPANY, SAN JOSE, CALIFORNIA
Abstract :
Low noise GaAs FET amplifier performance is enhanced at 1-2 GHz frequencies through the use of source inductance feedback. A simple circuit model predicts noise and signal performance and is used to derive matching circuits for the amplifier design. A 1-2 GHz single stage amplifier, designed on the basis of the modeled results, demonstrates <1.7dB noise figure, 15dB gain, and modest VSWR across the band. Over narrower band-widths, < ldB noise figure with 15dB of associated gain and <3:1 VSWR is demonstrated.
Keywords :
Circuit noise; FETs; Feedback; Frequency; Gallium arsenide; Inductance; L-band; Low-noise amplifiers; Noise figure; Predictive models;
Conference_Titel :
Microwave Conference, 1978. 8th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.1978.332528
