Title :
A new method for analysis of cycling-induced degradation components in split-gate flash memory cells
Author :
Tkachev, Yuri ; Kotov, Alexander
Author_Institution :
Silicon Storage Technol., Inc., Microchip Technol., Inc., San Jose, CA, USA
Abstract :
A new simple and fast method for separation of cycling-induced degradation components in split-gate SuperFlash® cell is proposed. The method is based on the effect of tunneling current stabilization during linearly ramped erase voltage.
Keywords :
flash memories; integrated circuit reliability; integrated memory circuits; tunnelling; SuperFlash cell; cycling-induced degradation components; linearly ramped erase voltage; split-gate flash memory cells; tunneling current stabilization; Charge carrier processes; Degradation; Electric potential; Logic gates; Nonvolatile memory; Programming; Tunneling; Flash memory; electron trapping; electron tunneling; floating gate; memory reliability; oxide degradation; program-erase cycling endurance;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4799-0350-4
DOI :
10.1109/IIRW.2013.6804173
