DocumentCode :
1972791
Title :
Large signal statistical compact model for LF noise
Author :
Wirth, Glen
Author_Institution :
Electr. Eng. Dept., UFRGS, Porto Alegre, Brazil
fYear :
2013
fDate :
13-17 Oct. 2013
Firstpage :
129
Lastpage :
132
Abstract :
We have performed statistical compact modeling of low-frequency (LF) noise in MOSFETs under large signal periodic (AC or cyclo-stationary) excitation, addressing relevant open issues in the literature. In the present work we introduce an equivalent Fermi level for cyclo-stationary excitation, unifying modeling of LF noise under constant (DC) bias and large signal periodic excitation. Results are compared to relevant experimental data from the literature, and Monte Carlo simulations are performed. The model is optimized for implementation into standard circuit simulators.
Keywords :
Fermi level; MOSFET; Monte Carlo methods; circuit simulation; semiconductor device models; semiconductor device noise; statistical analysis; MOSFETs; Monte Carlo simulations; cyclo-stationary excitation; equivalent Fermi level; large signal statistical compact model; low-frequency noise; signal periodic excitation; standard circuit simulators; Equations; Integrated circuit modeling; Low-frequency noise; Mathematical model; Noise reduction; Standards; MOSFET; compact modeling; low-frequency noise; random telegraph noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
Conference_Location :
South Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4799-0350-4
Type :
conf
DOI :
10.1109/IIRW.2013.6804176
Filename :
6804176
Link To Document :
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