Mechanisms and performance of metal oxide resistive RAM (RRAM)

Resistive RAM (RRAM) has emerged as a promising nonvolatile memory solution. Significant progress has been made on RRAM fabrication and characterization, as well as the understanding of the physical mechanisms. There are large varieties of RRAM materials and devices. However, some common characteristics have been observed in these devices, which can be attributed to the RRAM switching mechanisms. This tutorial will review RRAM switching models, based on which RRAM properties and performance can be analyzed. Tradeoffs among key device parameters are important for realistic assessment of RRAM in potential application space. Reliability is considered a major challenge for RRAM devices. Issues in commonly used RRAM characterization techniques will also be discussed.