DocumentCode :
1973243
Title :
Device-Cavity Interaction Simulations using T.L.M.
Author :
Sitch, J.E.
Author_Institution :
Department of Electronic and Electrical Engineering, The University of Sheffield, Mappin Street, Sheffield Sl 3JD, England.
fYear :
1978
fDate :
4-8 Sept. 1978
Firstpage :
442
Lastpage :
445
Abstract :
This paper describes a new numerical technique which is used to model a complete oscillator, including the active device and the passive circuits. Transmission line modelling is used to represent the cavity, which can contain lumped as well as distributed components. A self consistent physical model is used for the active device (a transferred-electron diode).
Keywords :
Circuit analysis; Circuit simulation; Conducting materials; Differential equations; Diodes; Distributed parameter circuits; Maxwell equations; Oscillators; Passive circuits; Transmission lines;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1978. 8th European
Conference_Location :
Paris, France
Type :
conf
DOI :
10.1109/EUMA.1978.332544
Filename :
4131242
Link To Document :
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