Improved Design Method for X-Band Microstrip FET Amplifiers without Experimental Adjustment Techniques.

In this paper we desrcibe a preoise method of designing FET amplifiers, that permit us to get a very good accordanoe between the ca1cu1ated design networks and the final results obtained by measurements, avoiding the lengthy and tricky adjustment that are usual. With our method we have designed a two-stage FET amplifier at 12 GHz, using two NE24406 transistors, with 21 dB gain, 4.0 dB noise factor and 1.25 input and output VSWR. The circuit has been made on alumina substrates. These excellent results were obtained in the first design without any adjustment, which proves the exactitude of our design method.