DocumentCode
1973289
Title
Crystal Orientation Dependence of Impurity Dopant Incorporation in MOVPE-grown III-V Materials
Author
Kondo, Makoto ; Anayama, Chikashi ; Tanahashi, Toshiyuki ; Yamazaki, Susumu
Author_Institution
Fujitsu Laboratories Ltd., Japan
fYear
1992
fDate
8-11 Jun 1992
Firstpage
121
Lastpage
122
Keywords
Bonding; Crystalline materials; Doping; Epitaxial growth; Epitaxial layers; Gallium arsenide; III-V semiconductor materials; Impurities; Semiconductor process modeling; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.664972
Filename
664972
Link To Document