• DocumentCode
    197330
  • Title

    The monolithic heterogeneous integration of GaAs PIN photodiode and Si CMOS-based transimpedance amplifier

  • Author

    Kume, E. ; Ishii, Hiroyuki ; Itatani, T. ; Yamanaka, S. ; Takada, Tatsuo ; Hata, Masaharu ; Osada, Takenori ; Inoue, Takeru ; Matsumoto, Yuki

  • Author_Institution
    Nano-Electron. Inst. Res., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This article describes a GaAs PIN photodiode was directly grown on a Si substrate in which CMOS-based transimpedance amplifier (TIA) was fabricated using general Si CMOS process. This monolithic integration device was successfully demonstrated.
  • Keywords
    CMOS integrated circuits; III-V semiconductors; elemental semiconductors; gallium arsenide; integrated optoelectronics; operational amplifiers; p-i-n photodiodes; silicon; GaAs PIN photodiode; GaAs-Si; Si CMOS-based transimpedance amplifier; TIA; monolithic heterogeneous integration; monolithic integration device; CMOS integrated circuits; Epitaxial growth; Gallium arsenide; Light emitting diodes; PIN photodiodes; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6990001
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=197330