a-Si:H Schottky diode direct detection pixel for large area X-ray imaging

Author

Aflatooni, K. ; Nathan, A. ; Hornsey, R. ; Cunningham, I.A. ; Chamberlain, S.G.

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

197

Lastpage

200

Abstract

We report the design and fabrication of a direct conversion X-ray detector based on Mo/a-Si:H Schottky diodes. Results of X-ray sensitivity are presented for a broad range of medical X-ray energies (20-100 keV), along with the influence of various geometric and operating parameters on detector sensitivity and stability. The detector fabrication process is fully compatible with a-Si:H thin film transistor technology. Measurements, performed in a medical environment, demonstrate the feasibility of the detector for large area medical imaging applications.

Keywords

Schottky diodes; X-ray detection; X-ray imaging; amorphous semiconductors; diagnostic radiography; elemental semiconductors; hydrogen; silicon; 20 to 100 keV; Mo-Si:H; Mo/a-Si:H Schottky diode; X-ray imaging; design; direct conversion X-ray detector; direct detection pixel; fabrication; large area medical imaging; sensitivity; stability; Area measurement; Biomedical imaging; Fabrication; Performance evaluation; Schottky diodes; Stability; Thin film transistors; X-ray detection; X-ray detectors; X-ray imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650326

Filename

650326