DocumentCode
1973541
Title
High light-extraction efficiency GaN-based vertical injection LEDs with surface nipple array
Author
Chiu, C.H. ; Tsai, M.A. ; Yu, Peichen ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C.
Author_Institution
Dept. of Photonics, Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fYear
2009
fDate
30-3 Aug. 2009
Firstpage
1
Lastpage
2
Abstract
The surface nipple arrays were formed by self-assembled polystyrene nano-spheres and inductively coupled plasma etching. The light output power of the vertical-injection LEDs with nipple array shows 68% enhancement than that of without the nipple array at a driving current of 350 mA.
Keywords
III-V semiconductors; gallium compounds; light emitting diodes; nanoparticles; self-assembly; sputter etching; wide band gap semiconductors; GaN; light-extraction efficiency; plasma etching; self-assembled polystyrene nano-spheres; surface nipple array; vertical injection light emitting diodes; Etching; Gallium nitride; Light emitting diodes; Lithography; Optical arrays; Optical device fabrication; Power generation; Scanning electron microscopy; Self-assembly; Surface structures; GaN LEDs; nipple array; polystyrene nano-sphere;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-3829-7
Electronic_ISBN
978-1-4244-3830-3
Type
conf
DOI
10.1109/CLEOPR.2009.5292290
Filename
5292290
Link To Document