• DocumentCode
    1973648
  • Title

    Continuous-wave single-mode electrically -pumped GaSb-based VCSELs at 2.5 μm

  • Author

    Arafin, Shamsul ; Bachmann, Alexander ; Kashani-Shirazi, Kaveh ; Amann, Markus-Christian

  • Author_Institution
    Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
  • fYear
    2009
  • fDate
    30-3 Aug. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The first 2.5 mum electrically-pumped (Ith = 8 mA) single-mode (SMSR > 27 dB) GaSb-based vertical-cavity surface-emitting lasers are presented. The devices that are based on the buried tunnel junction structure operate continuous-wave up to 20degC.
  • Keywords
    III-V semiconductors; gallium compounds; optical pumping; surface emitting lasers; GaSb; VCSEL; buried tunnel junction structure; continuous-wave single-mode laser; electrically pumped laser; vertical cavity surface emitting lasers; wavelength 2.5 mum; Absorption; Distributed Bragg reflectors; Gas lasers; Laser modes; Molecular beam epitaxial growth; Reflectivity; Surface emitting lasers; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers; TDLAS; VCSEL; buried tunnel junction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-3829-7
  • Electronic_ISBN
    978-1-4244-3830-3
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2009.5292295
  • Filename
    5292295
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1973648