• DocumentCode
    1973753
  • Title

    Photonic crystal nanocavity lasers with InAs quantum dots bonded onto silicon substrates

  • Author

    Tanabe, Katsuaki ; Nomura, Masahiro ; Guimard, Denis ; Iwamoto, Satoshi ; Arakawa, Yasuhiko

  • Author_Institution
    Inst. for Nano Quantum Inf. Electron., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2009
  • fDate
    30-3 Aug. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Room temperature, continuous-wave lasing in a photonic crystal nanocavity bonded onto a silicon substrate was demonstrated by utilizing InAs quantum dots gain at 1.3 mum. A threshold absorbed power down to 2 muW was achieved.
  • Keywords
    III-V semiconductors; indium compounds; laser cavity resonators; microcavities; nanophotonics; photonic crystals; quantum dot lasers; semiconductor quantum dots; InAs; Si; continuous-wave lasing; indium arsenide quantum dots; photonic crystal nanocavity laser; semiconductor laser; silicon substrate; temperature 293 K to 298 K; threshold absorbed power; wavelength 1.3 mum; Bonding; Gallium arsenide; Optical coupling; Optical pumping; Photonic crystals; Pump lasers; Quantum dot lasers; Silicon; Slabs; Substrates; photonic crystal; quantum dot; semiconductor laser; silicon photonics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-3829-7
  • Electronic_ISBN
    978-1-4244-3830-3
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2009.5292300
  • Filename
    5292300
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1973753