DocumentCode :
1974209
Title :
The Effects of Substrate Disorientation on Silicon Doping Efficiency in OMVPE Grown GaAs
Author :
Thompson, Alan G.
Author_Institution :
High Technology Center, Boeing Defense and Space Group, Seattle, WA
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
130
Lastpage :
131
Keywords :
Doping; Epitaxial growth; Gallium arsenide; Hall effect; Semiconductor process modeling; Silicon; Space technology; Substrates; Surface morphology; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664977
Filename :
664977
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1974209
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