Title :
Analytical Design and Simulation Studies of Super-junction Power MOSFET
Author :
Pravin, Kondekar N.
Author_Institution :
Inf. & Commun. Univ., Daejeon
Abstract :
Using the super-junction theory we develop an analytical design methodology for high voltage Super-junction power MOSFET, which offers very low on resistance as compared with VDMOS power device due to higher doping density in the drift region. This method is used to analytically design various rating super-junction power MOSFET and using simulation tools, the validity of this method is established and then used to study the physical mechanisms underlying the device operation.
Keywords :
power MOSFET; MOSFET Simulation; MOSFET design; doping density; drift region; super-junction theory; superjunction power MOSFET; Analytical models; Design engineering; Doping; Electric resistance; Geometry; Information analysis; MOSFET circuits; Power MOSFET; Power engineering and energy; Semiconductor process modeling;
Conference_Titel :
Industrial Electronics, 2007. ISIE 2007. IEEE International Symposium on
Conference_Location :
Vigo
Print_ISBN :
978-1-4244-0754-5
Electronic_ISBN :
978-1-4244-0755-2
DOI :
10.1109/ISIE.2007.4374648
