DocumentCode :
1974583
Title :
Effect of Substrate Misorientations on the Optical Properties and Doping Characteristics of MOVPE Grown Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P
Author :
Jou, Ming-Jiunn ; Lin, Jyh-Feng ; Chen, Chin-Yuan ; Lee, Biing-Jye
Author_Institution :
Research Institute of Electrical Engineering, National Tsing Hua University, Taiwan
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
134
Lastpage :
135
Keywords :
Doping; Epitaxial growth; Epitaxial layers; Gallium arsenide; Laboratories; Optical materials; Optical surface waves; Substrates; Surface morphology; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664979
Filename :
664979
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1974583
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