Title :
Development of high power press-pack IGBT and its applications
Author :
Uchida, Yoshiyuki ; Seki, Yasukazu ; Takahashi, Yoshikazu ; Ichijoh, Masami
Author_Institution :
Electron. Co., Fuji Electr. Co. Ltd., Tokyo, Japan
Abstract :
Press-pack IGBT has been developed in recent years as a superior high power IGBT device to conventional IGBT module in reliability and performance. This type of IGBT is replacing GTO or thyristor in such applications as traction, power transmission and industrial motor drive because of its excellent advantages such as high performance, high reliability, compactness due to the both-sided cooling, rupture free feature, and so forth. This paper reviews the performance and structure of 2.5 kV and 4.5 kV press-pack IGBT´s and their major applications
Keywords :
insulated gate bipolar transistors; 2.5 kV; 4.5 kV; high power device; press-pack IGBT; Cooling; Insulated gate bipolar transistors; Metalworking machines; Motor drives; Multichip modules; Packaging; Power system reliability; Power transmission; Thyristors; Voltage;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.840538
