• DocumentCode
    1975308
  • Title

    A Reliability Study of Power GaAs FETs

  • Author

    Drukier, I. ; Silcox, J.F., Jr.

  • fYear
    1979
  • fDate
    17-20 Sept. 1979
  • Firstpage
    277
  • Lastpage
    281
  • Abstract
    Accelerated life tests on power GaAs FETs have shown these devices to be reliable components. At an operating temperature of 125°C a MTTF of 4 × 106 hours is predicted. The activation energy of this process is 1.8eV. Failures are related to the gate.
  • Keywords
    Circuit testing; FETs; Failure analysis; Gallium arsenide; Life testing; Microwave devices; Microwave measurements; Packaging; Power system reliability; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1979. 9th European
  • Conference_Location
    Brighton, UK
  • Type

    conf

  • DOI
    10.1109/EUMA.1979.332713
  • Filename
    4131355
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1975308