4.5 kV – 400 A SiC-PiN diode and Si-IEGT hybrid pair module for high switching frequency operation

Author

Takao, Kazuto ; Wada, Kazuyoshi ; Kyungmin Sung ; Mastuoka, Yuji ; Tanaka, Yuichi ; Nishizawa, Shinichi ; Kanai, Teruto ; Shinohe, Takashi ; Ohashi, H.

Author_Institution

Corp. R & D Center, Toshiba Corp., Kawasaki, Japan

fYear

2013

fDate

20-23 Oct. 2013

Firstpage

1

Lastpage

4

Abstract

A 4.5 kV-400A SiC-PiN diode and Si-IEGT hybrid pair module has been developed for realizing high switching frequency operations of medium-voltage power converters. The maximum switching frequency of the hybrid pair module is theoretically analyzed from viewpoints of cooling capacity of the heat sink and the minimum pulse width of a PWM signal. Operation tests of the hybrid pair module are implemented and 10 kHz operation has been successfully demonstrated.

Keywords

PWM power convertors; cooling; elemental semiconductors; heat sinks; modules; p-i-n diodes; silicon; silicon compounds; switching convertors; transistors; wide band gap semiconductors; IEGT; PWM signal; PiN diode; Si; SiC; cooling capacity; current 400 A; heat sink; high switching frequency operation; hybrid pair module; injection enhanced gate transistor; medium-voltage power converter; voltage 4.5 kV; Oils; Saturation magnetization; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Electric Power Equipment - Switching Technology (ICEPE-ST), 2013 2nd International Conference on

Conference_Location

Matsue

Type

conf

DOI

10.1109/ICEPE-ST.2013.6804322

Filename

6804322