Title :
Development of semiconductor switches (SiC-BGSIT) applied for DC circuit breakers
Author :
Tanaka, Yuichi ; Takatsuka, Akio ; Yatsuo, Tsutomu ; Sato, Yuuki ; Ohashi, H.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
In this paper, we introduce silicon carbide (SiC) buried gate static induction transistors (BGSITs) which can be applied for circuit breakers in DC distribution systems. SiC-BGSITs have excellent electrical properties such as low on-resistance, first switching speed and robustness. These properties are indispensable for the realization of semiconductor circuit breakers in DC distribution systems and cannot be achieved by any other semiconductor materials.
Keywords :
circuit breakers; distribution networks; semiconductor switches; silicon compounds; transistors; wide band gap semiconductors; BGSIT; DC circuit breaker; DC distribution system; SiC; buried gate static induction transistor; semiconductor circuit breaker; semiconductor material; semiconductor switch; Diamonds; Gallium arsenide; Gallium nitride; Robustness; Silicon; Silicon carbide; Switches;
Conference_Titel :
Electric Power Equipment - Switching Technology (ICEPE-ST), 2013 2nd International Conference on
Conference_Location :
Matsue
DOI :
10.1109/ICEPE-ST.2013.6804323
