مرکز منطقه ای اطلاع رساني علوم و فناوري - Growth of GaAs using a N<sub>2</sub> Carrier

DocumentCode :

1976338

Title :

Growth of GaAs using a N₂ Carrier

Author :

Hardtdegen, H. ; Hollfelder, M. ; Meyer, R. ; Szynka, D. ; Lüth, H.

Author_Institution :

Institute of Thin Film and Ion Technology, Julich

fYear :

1992

fDate :

8-11 Jun 1992

Firstpage :

147

Lastpage :

148

Keywords :

Epitaxial growth; Epitaxial layers; Fluid flow; Gallium arsenide; Gettering; Hydrogen; Purification; Raman scattering; Safety; Temperature;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference

Print_ISBN :

0-87942-652-7

Type :

conf

DOI :

10.1109/MOVPE.1992.664987

Filename :

664987

Link To Document :