DocumentCode

1976338

Title

Growth of GaAs using a N₂ Carrier

Author

Hardtdegen, H. ; Hollfelder, M. ; Meyer, R. ; Szynka, D. ; Lüth, H.

Author_Institution

Institute of Thin Film and Ion Technology, Julich

fYear

1992

fDate

8-11 Jun 1992

Firstpage

147

Lastpage

148

Keywords

Epitaxial growth; Epitaxial layers; Fluid flow; Gallium arsenide; Gettering; Hydrogen; Purification; Raman scattering; Safety; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference

Print_ISBN

0-87942-652-7

Type

conf

DOI

10.1109/MOVPE.1992.664987

Filename

664987