DocumentCode :
1977572
Title :
Tm Doping of III-V Semiconductors by MOVPE
Author :
Weber, J. ; Scholz, F. ; Ottenwälder, D. ; Pressel, K. ; Hiller, C. ; Dörnen, A. ; Cordeddu, F.
Author_Institution :
Universitat Stuttgart, Germany
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
156
Lastpage :
157
Keywords :
Atom optics; Chemical elements; Epitaxial growth; Epitaxial layers; Erbium; Gallium arsenide; III-V semiconductor materials; Lattices; Semiconductor device doping; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664992
Filename :
664992
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1977572
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