Title :
Carbon Doped AlxGa1-xAs by OMVPE: Doping Properties, Oxygen and Hydrogen Incorporation, and Device Applications
Author :
Hobson, W.S. ; Pearton, S.J. ; Ren, F. ; Kozuch, D.M. ; Stavola, M.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, New Jersey
Keywords :
Capacitance measurement; Doping; Epitaxial growth; Epitaxial layers; Gallium arsenide; Heterojunction bipolar transistors; Hydrogen; Infrared detectors; Mass spectroscopy; Oxygen;
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
DOI :
10.1109/MOVPE.1992.664999