DocumentCode :
1978126
Title :
Carbon Doped AlxGa1-xAs by OMVPE: Doping Properties, Oxygen and Hydrogen Incorporation, and Device Applications
Author :
Hobson, W.S. ; Pearton, S.J. ; Ren, F. ; Kozuch, D.M. ; Stavola, M.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, New Jersey
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
169
Lastpage :
170
Keywords :
Capacitance measurement; Doping; Epitaxial growth; Epitaxial layers; Gallium arsenide; Heterojunction bipolar transistors; Hydrogen; Infrared detectors; Mass spectroscopy; Oxygen;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664999
Filename :
664999
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1978126
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