• DocumentCode
    1978163
  • Title

    Development of a room temperature thin film In2O3, ZnO and SnO2 ozone sensor

  • Author

    Arshak, K. ; Hickey, G. ; Forde, E. ; Harris, J.

  • Author_Institution
    Univ. of Limerick, Limerick
  • fYear
    2007
  • fDate
    4-7 June 2007
  • Firstpage
    1536
  • Lastpage
    1541
  • Abstract
    Thin films of Indium-zinc-tin oxide have been prepared by Vacuum Thermal Evaporation (VTE). The sensing characteristics of these films to environmentally relevant ozone concentrations were studied at room temperature. The effects of film thickness, deposition rate and annealing were investigated. The resistance of the thin film was found to be inversely proportional to the deposition rate. The highest sensitivity of the ozone sensors was found at a deposition rate of 1.2 nm/s - 1.4 nm/s. In addition the O3 sensors were found to perform best with a 40 nm thick sensing layer. ln2O3, ZnO and SnO2 were deposited on alumina substrates containing interdigitated electrodes by means of VTE. These results have shown that In2O3:ZnO:SnO2 thin films prepared by VTE method are promising for room temperature ozone sensing.
  • Keywords
    annealing; chemical sensors; indium compounds; oxygen; vacuum deposition; zinc compounds; In2O3; In2O3 - Binary; SnO2; SnO2 - Binary; ZnO; ZnO - Binary; annealing; deposition rate; film thickness; ozone sensor; room temperature thin film; vacuum thermal evaporation; Energy consumption; Gas detectors; Gases; Health and safety; Instruments; Sensor phenomena and characterization; Temperature sensors; Thin film sensors; Transistors; Zinc oxide; Indium Oxide; Ozone sensor; Thin film;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial Electronics, 2007. ISIE 2007. IEEE International Symposium on
  • Conference_Location
    Vigo
  • Print_ISBN
    978-1-4244-0754-5
  • Electronic_ISBN
    978-1-4244-0755-2
  • Type

    conf

  • DOI
    10.1109/ISIE.2007.4374831
  • Filename
    4374831