DocumentCode
1978163
Title
Development of a room temperature thin film In2 O3 , ZnO and SnO2 ozone sensor
Author
Arshak, K. ; Hickey, G. ; Forde, E. ; Harris, J.
Author_Institution
Univ. of Limerick, Limerick
fYear
2007
fDate
4-7 June 2007
Firstpage
1536
Lastpage
1541
Abstract
Thin films of Indium-zinc-tin oxide have been prepared by Vacuum Thermal Evaporation (VTE). The sensing characteristics of these films to environmentally relevant ozone concentrations were studied at room temperature. The effects of film thickness, deposition rate and annealing were investigated. The resistance of the thin film was found to be inversely proportional to the deposition rate. The highest sensitivity of the ozone sensors was found at a deposition rate of 1.2 nm/s - 1.4 nm/s. In addition the O3 sensors were found to perform best with a 40 nm thick sensing layer. ln2O3, ZnO and SnO2 were deposited on alumina substrates containing interdigitated electrodes by means of VTE. These results have shown that In2O3:ZnO:SnO2 thin films prepared by VTE method are promising for room temperature ozone sensing.
Keywords
annealing; chemical sensors; indium compounds; oxygen; vacuum deposition; zinc compounds; In2O3; In2O3 - Binary; SnO2; SnO2 - Binary; ZnO; ZnO - Binary; annealing; deposition rate; film thickness; ozone sensor; room temperature thin film; vacuum thermal evaporation; Energy consumption; Gas detectors; Gases; Health and safety; Instruments; Sensor phenomena and characterization; Temperature sensors; Thin film sensors; Transistors; Zinc oxide; Indium Oxide; Ozone sensor; Thin film;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics, 2007. ISIE 2007. IEEE International Symposium on
Conference_Location
Vigo
Print_ISBN
978-1-4244-0754-5
Electronic_ISBN
978-1-4244-0755-2
Type
conf
DOI
10.1109/ISIE.2007.4374831
Filename
4374831
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